0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 FMMTL717 features very low equivalent on-resistance;r ce(sat) =160m at 1.25a. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -12 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -5 v collector current i c -1.25 a peak pulse current i cm -4 a base current i b -200 ma power dissipation p tot -500 mw operating and storage temperature range t j, t stg -55to+150 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors product specification 4008-318-123
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a -12 -35 v collector-emitter breakdown voltage v (br)ceo i c =-10ma* -12 -25 v emitter-base breakdown voltage v (br)ebo i e =-100a -5 -8.5 v collector-base cut-off current i cbo v cb =-10v -10 na emitter-base current i ebo v eb =-4v -10 na collector-emitter saturation voltage v ce( sat) i c =-100ma, i b =-10ma* i c =-500ma, i b =-20ma* i c =-1a, i b =-50ma* i c =-1.25a,i b =-50ma -24 -94 -160 -200 -40 -140 -240 -290 mv base-emitter saturation voltage v be( sat) i c =-1.25a, i b =-50ma* -970 -1100 mv base-emitter on voltage v be(on ) i c =-1.25a, v ce =-2v* -875 -1000 mv dc current gain h fe i c =-10ma, v ce =-2v i c =-100ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-3a, v ce =-2v* 300 300 180 100 50 490 450 275 180 110 current-gain-bandwidth product f t i c =-50ma, v ce =-10v f=100mhz 205 mhz output capacitance c obo v cb =-10v, f=1mhz 15 20 pf turn-on time t (on) i c =-1a, v cc =-10v 76 ns turn-off time t (off) i b1 =i b2 =-10ma 149 ns * pulse test: tp 300 s; d 0.02. marking marking l77 sales@twtysemi.com 2 of 2 http://www.twtysemi.com FMMTL717 smd type ic smd type transistors product specification 4008-318-123
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